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ST introduces the 3 generation of STPOWER silicon carbide (SiC) MOSFET transistors
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ST's latest generation of silicon carbide (SiC) power devices improves performance and reliability, maintaining its customary leadership position and making it more suitable for electric vehicles and energy-efficient industrial applications Continued long-term investment in the SiC market as ST embraces future growth STMicroelectronics (ST) launched the third generation of STPOWER silicon carbide (SiC) MOSFET transistors "MOSFETs (metal oxide semiconductor field effect transistors) are a fundamental component of modern electronics. To advance the cutting-edge applications in electric vehicle powertrain power devices, and in other scenarios where high power density, high energy efficiency and high reliability are important goals. Edoardo Merli, vice president of ST's Automotive and Discrete Devices product group and general manager of the Power Transistors business unit, said. We continue to drive this exciting technology development, innovating at both chip and package levels. As a manufacturer of Si
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